 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2.5V Drive Nch MOSFET RSU002N06 Structure Silicon N-channel MOSFET Features 1) High speed switing. 2) Small package(UMT3). 3) Low voltage drive(2.5V drive). Application Switching Abbreviated symbol : RK Dimensions (Unit : mm) UMT3 (SC-70) Packaging specifications Package Type Code Basic ordering unit (pieces) RSU002N06 Inner circuit Taping T106 3000 (2) (3) 2 1 (1) 1 ESD PROTECTION DIODE 2 BODY DIODE (1) SOURCE (2) GATE (3) DRAIN Absolute maximum ratings (Ta = 25C) Symbol Parameter Limits 60 20 250 1 150 1 200 150 55 to +150 Unit V V mA A mA A mW C C Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg *1 *1 *2 Thermal resistance Parameter Symbol Rth (ch-a)* Limits 625 Unit C / W Channel to ambient * Each terminal mounted on a recommended land. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.04 - Rev.A RSU002N06 Electrical characteristics (Ta = 25C) Parameter Symbol Data Sheet Min. 60 1.0 0.25 - Typ. 1.7 2.1 2.3 3.0 15 4.5 2.0 3.5 5 18 28 Max. 10 1 2.3 2.4 3.0 3.2 12.0 - Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=250mA, VGS=10V ID=250mA, VGS=4.5V ID=250mA, VGS=4.0V ID=10mA, VGS=2.5V ID=250mA, VDS=10V VDS=25V VGS=0V f=1MHz ID=100mA, VDD VGS=10V RL 300 RG=10 30V Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time *Pulsed IGSS IDSS VGS (th) * RDS (on) Drain-source breakdown voltage V(BR)DSS l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * S pF pF pF ns ns ns ns Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Symbol Min. Typ. * Forward voltage VSD *Pulsed Max. 1.2 Unit V Conditions Is=250mA, VGS=0V www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.04 - Rev.A RSU002N06 Electrical characteristic curves 0.5 Data Sheet DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 0.4 0.3 0.2 VGS= 2.8V 0.1 VGS= 2.5V 0 0 0.2 0.4 0.6 0.8 1 VGS= 10V VGS= 4.5V VGS= 4.0V 0.4 0.3 DRAIN CURRENT : ID[A] Ta= 25C Pulsed 0.5 VGS= 10V VGS= 4.5V VGS= 4.0V Ta= 25C Pulsed 1 VDS= 10V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 0.1 VGS= 2.8V 0.2 0.1 0 0 2 4 6 8 10 VGS= 2.5V 0.01 0.001 0.0001 0 1 2 3 GS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( ) DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( ) GATE-SOURCE VOLTAGE : V Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[ Ta= 25C Pulsed 10 VGS= 2.5V VGS= 4.0V VGS= 4.5V VGS= 10V STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[ VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[ ] 100 100 100 10 Ta=125C Ta=75C Ta=25C Ta= -25C VGS= 4.5V Pulsed 10 Ta=125C Ta=75C Ta=25C Ta= -25C 1 1 1 0.1 0.001 0.01 0.1 1 0.1 0.001 0.01 0.1 1 0.1 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( ) DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( ) DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( ) 100 100 STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[ STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[ 10 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VGS= 4.0V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C VGS= 2.5V Pulsed 1 Ta=125C Ta=75C Ta=25C Ta= -25C VDS= 10V Pulsed 0.1 1 1 Ta= -25C Ta=25C Ta=75C Ta=125C 0.1 0.001 0.01 0.1 1 0.1 0.001 0.01 0.1 1 0.01 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( ) DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( ) DRAIN-CURRENT : ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. 3/5 2010.04 - Rev.A RSU002N06 1 8 1000 Data Sheet REVERSE DRAIN CURRENT : Is [A] SWITCHING TIME : t [ns] VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(ON)[ Ta=25C Pulsed 6 ID= 0.01A 4 ID= 0.25A td(off) tf 100 Ta=25C VDD= 30V VGS=10V RG=10 Pulsed 0.1 0.01 Ta=125C Ta=75C Ta=25C Ta=-25C 10 2 td(on) tr 0.001 0 0.5 1 1.5 0 0 2.5 5 7.5 10 1 0.01 0.1 DRAIN-CURRENT : ID[A] Fig.12 Switching Characteristics 1 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 100 CAPACITANCE : C [pF] Ta=25C f=1MHz VGS=0V Ciss 10 Crss Coss 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS [V] Fig.13 Typical Capacitance vs. Drain-Source Voltage www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.04 - Rev.A RSU002N06 Measurement circuits Pulse width VGS ID RL D.U.T. RG VDD VDS Data Sheet VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.04 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2010 ROHM Co., Ltd. All rights reserved. R1010A |
Price & Availability of RSU002N06
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |